Method of doping crystalline silicon film

Details Method of doping crystalline silicon film Method of doping crystalline silicon film

1996-01-24

2000-12-26

Wilczewski, Mary

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438530, 438532, 438289, 438291, 438217, 438166, 438163, H01L 21265, H01L 21266

Patent

active

061658766

ABSTRACT:
After an ion having n-type or p-type impurity necessary for a crystalline silicon film is implanted by a known ion implantation or ion doping, a laser light or an equivalent intense light is irradiated onto the crystalline silicon film, to thereby improve the crystallinity of the silicon film and activate the impurity, and in the succeeding process, the silicon film is not thermally annealed at 450.degree. C. or higher. Also, under a state where a substrate is heated at 50 to 500.degree. C., preferably 200 to 350.degree. C., an ion having n-type or p-type impurity necessary for a crystalline silicon film is implanted by the ion doping, and in the succeeding process, the silicon film is not thermally annealed at 450.degree. C. or higher.

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