Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-02-20
2007-02-20
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
10948154
ABSTRACT:
A method of dividing a circuit pattern for creating complementary stencil masks corresponding to complementary patterns, the method comprising a step of dividing a circuit pattern into a plurality of complementary patterns including a first complementary pattern comprising a pattern of a cantilevered beam member having a support portion width W1and a length L1, and a second complementary pattern comprising a pattern of a both end-supported beam member having a support portion width W2and a length L2. The dividing of the circuit pattern is performed in a manner that a aspect ratio A1(L1/W1) of the pattern of the cantilevered beam member is confined to not more than 100, and that a aspect ratio A2(L2/W2) of the pattern of the both end-supported beam member is confined to not more than 150.
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Eguchi Hideyuki
Sugimura Hiroshi
Tamura Akira
Yoshii Takashi
Lin Sun James
Toppan Printing Co. Ltd.
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