Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ordering or disordering
Reexamination Certificate
2005-08-30
2005-08-30
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ordering or disordering
C438S514000, C438S518000, C438S522000, C438S528000
Reexamination Certificate
active
06936526
ABSTRACT:
A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.
REFERENCES:
patent: 4902897 (1990-02-01), Iwamatsu
patent: 5192709 (1993-03-01), Petroff
patent: 5238868 (1993-08-01), Elman et al.
patent: 5395793 (1995-03-01), Charbonneau et al.
patent: 6420728 (2002-07-01), Razeghi
patent: 6540953 (2003-04-01), Lee et al.
Allard, et al., “Threshold Dose for Ion-Induced Intermixing in inGaAs/GaAs Quantum Wells”, (1994) Applied Physics Letters, 64, pp. 2412-2414.
Charbonneau, et al., “Photonic Integrated Circuits Fabricated Using Ion Implantation”, (1998) IEEE Journal of Selected Topics in Quantum Electronics 4, pp. 772-793.
Charbonneau, et al., “Band-Gap Tuning of InGaAs/InGaAsP/InP.Laser Using High Energy Ion Implantation”, (1995) Applied Physics Letters 67, pp. 2954-2956.
Charbonneau, et al., “Quantum-Well Intermixing of Optoelectronic Integration Using High Energy Ion Implantation”, (1995) Journal of Applied Physics 78, pp. 3697-3705.
Fu, et al., “Proton Irradiation-Induced Intermixing in GaAs/(AI)GaAs Quantum Wells and Quantum-Well Lasers”, (1999) Journal of Applied Physics Letters 85, pp. 6786-6789.
Liu, et al., “Wavelength Tuning of GaAs/AIGaAs Quantum-Well Infrared Photo-Detectors by Proton Implantation Induced Intermixing”, (2000) Japanese Journal of applied Physics 39, pp. 1687-1689.
Fu, et al., “Postgrowth Wavelength Tuning of Optoelectronic Devices by Ion Implantation Induced Quantum Well Intermixing”, (2000) Proceedings of Conf. on Optoelectronic and Microelectronic Matericals and Devices, Melbourne, Australia, pp. 344-347.
Fu, et al., “Tuning of Detection Wavelength of Quantum-Well Infrared Photodetectors by Quantum Well Intermixing”, (2001) Infrared Physics and Technology, 42/3-5, pp. 171-175.
Fu, et al., “Tuning the Detection Wavelength of Quantum-Well Infrared Photodetectors by Single High-Energy Implantation”, (2001) Applied Physics Letters 78, pp. 10-12.
Goldberg, et al., “Ion Beam Intermixing of Semiconductor Heterostructures for Optoelectronic Applications”, (1997), Nuclear Instruments, & Methods in Physics Research Section B, 127, pp. 418-422.
Haysom, et al., “Lateral Selectivity of Ion-Induced Quantum Well Intermixing”, (1998), Journal of Vacuum Science and Technology A 16, pp. 817-820.
He, et al., “Bandgap Shifted InGaAsP/InP Quantum Well Waveguides Using Mev Ion Implantation”, (1995), Electronic Letters 31, pp. 2094-2095.
Johnston, et al., “Interdiffused Quantum-Well Infrared Photodetectors for Color Sensitive Arrays”, (1999) Applied Physics Letters 75, pp. 923-925.
Li, et al., “Proton Implantation and Rapid Thermal Annealing Effects on GaAs/AIGaAs Quantum Well Infrared Photodectors”, (1999) Superlattices and Microstructures 26, pp. 317-324.
Piva, et al., “Ion Implantation Enhanced Intermixing of Al-Free 980 nm Laser Structures” (1998) Applied Physics Letters 73, pp. 67-69.
Piva, et al., “Bandgap Tuning of Semiconductor Quantum Well Structures Using Ion Implantation”, (1994) Superlattices & Microstructures 15, pp. 385-389.
Poole, et al., “Demonstration of an Ion-Implanted, Wavelength-shifted Quantum-Well Laser”, (1996) IEEE Photonics Technology Letters 8, pp. 16-18.
Poole, et al., “ The Fabrication of a Broad-Spectrum Light-Emitting Diode Using High Energy Ion Implantation” (1996) IEEE Photonics Technology Letters 8, pp. 1145-1147.
Poole, et al., “Defect Diffusion in Ion Implanted AlGaAs and InP—Consequences for Quantum Well Intermixing” (1995) Journal of Applied Physics 78, pp. 2367-2371.
Poole, et al., “The Enhancement of Quantum Well Intermixing Through Repeated Ion Implantation” (1994) Semiconductor Science & Technology 9, pp. 2134-3137.
Steele, et al., “Postgrowth Tuning of Quantum-Well Infrared Detectors by Rapid Thermal Annealing” (1994) Journal of Applied Physics Letters 75, pp. 8234-8236.
Tan, et al., “Wavelength Shifting in GaAs Quantum Wells Lasers by Proton Irradiation”, (1997) Applied Physics Letters 71, pp. 2680-2682.
Charbonneau, et al., “Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation”, (1995) Nuclear Instruments and Methods in Physics Research B, pp. 457-460.
Li, et al., “Multiple energy proton implantation induced quantum well intermixing in GaAs/AiGaAs quantum-well infrared photodetectors”, (1999) CLEO/Pacific Rim '99, pp. 312-313.
R.D. Goldberg, et al., “Selective Intermixing of Ion Irradiated Semiconductor Heterostructures”, (1999) Mat. Res. Soc. Sump. Proc. vol. 540, pp. 15-26.
Fu Lan
Jagadish Chennupati
Tan Hark Hoe
Lee Hsien-Ming
The Australian National University
LandOfFree
Method of disordering quantum well heterostructures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of disordering quantum well heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of disordering quantum well heterostructures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470078