Method of direct write desposition of a conductor on a semicondu

Details Method of direct write desposition of a conductor on a semicondu Method of direct write desposition of a conductor on a semicondu

1988-06-29

1990-01-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 156662, 21912185, 357 65, 357 71, 437192, 437193, 437233, 437248, 437967, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048971502

ABSTRACT:
An improved method of patterning a conductive interconnect on a semiconductor element is disclosed. A catalytic layer of, for example, amorphous silicon is deposited on a semiconductor element. The areas over which a conductive pattern is to be formed is activated by directing a focused laser beam onto the amorphous silicon to form crystallized silicon. The amorphous silicon is then etched away after which a conductive material such as a metal is deposited on the activated crystallized silicon.

REFERENCES:
patent: 3853648 (1974-12-01), Janus et al.
patent: 4319954 (1982-03-01), White et al.
patent: 4358326 (1982-11-01), Doo
patent: 4415383 (1983-11-01), Naem et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4597160 (1986-07-01), Ipri

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