Method of diffusion of impurities

Details Method of diffusion of impurities Method of diffusion of impurities

1985-11-27

1987-10-06

Lindsay, Robert L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156628, 156632, 156633, 156643, 156653, 20419223, 20419237, B44C 122, C03C 2506

Patent

active

046981225

ABSTRACT:
A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20.ANG. so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

REFERENCES:
patent: 4264381 (1981-04-01), Thompson et al.
patent: 4380489 (1983-04-01), Beinvogl et al.
patent: 4532004 (1985-07-01), Akiyama et al.
patent: 4533429 (1985-08-01), Josquin

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