Method of dicing semiconductor wafer

Details Method of dicing semiconductor wafer Method of dicing semiconductor wafer

1998-10-09

2000-10-24

Fourson, George

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

438463, 438464, 438465, H01L 21304

Patent

active

061366684

ABSTRACT:
A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.

REFERENCES:
patent: 3970819 (1976-07-01), Gates et al.
patent: 5552345 (1996-09-01), Schrantz et al.

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