Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read only systems
Semiconductive
C365S185010
Reexamination Certificate
active
07038928
ABSTRACT:
A method of determining an optimal reading voltage for reading a two-side non-volatile memory programmed with a threshold voltage Vt is described. A first side of a memory cell is programmed to Vt, and then an I1-Vg curve of the first side and an I2-Vg curve of the second side are measured, wherein Vg is the gate voltage. A Gm1-Vg curve and a Gm2-Vg curve are plotted, wherein Gm1=dI1/dVg and Gm2=dI2/dVg. The optimal reading voltage VgOis determined as the gate voltage at the intersection of Gm1and Gm2, corresponding to a maximal total current window Wm (=I2(VgO)−I1(VgO)).
REFERENCES:
patent: 6438027 (2002-08-01), Kwon
Hsu Tzu-Hsuan
Lee Ming-Hsiu
Lung Hsiang-Lan
Wu Chao-I
J.C. Patents
Luu Pho M.
Macronix International Co. Ltd.
Nguyen Van Thu
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