Method of determining n-well scattering effects on FETs

Details Method of determining n-well scattering effects on FETs Method of determining n-well scattering effects on FETs

2005-03-08

2010-11-02

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C257SE21521, C257SE21529, C716S030000, C716S030000, C438S014000

Reexamination Certificate

active

07824933

ABSTRACT:
A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined step sizes. The step sizes may vary from step to step after each step, the scattering effects due to the resist edge at its particular location is determined. A resist of virtually any shape may be divided into its component edges and each edge may be individually stepped during the process.

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