Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-11-15
2005-11-15
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492300, C250S397000, C250S398000, C438S961000
Reexamination Certificate
active
06965116
ABSTRACT:
Dose uniformity of a scanning ion implanter is determined. A base beam current is measured at the beginning and/or the end of a complete scan over the whole substrate area. This base beam current is measured at a time when the measurement should be unaffected by outgassing from a substrate being implanted and a base dose distribution map is then calculated for the scan in question. During the scan itself beam instability events are detected and the magnitude and position in the scan of the detected instability events is measured. Corresponding deviations in the calculated base dose map are determined and subtracted from the previously calculated base dose distribution map to provide a corrected distribution map. By determining overall dose uniformity substractively in this way, good overall accuracy can be obtained with lesser accuracy in the measurement of the beam instability events.
REFERENCES:
patent: 4234797 (1980-11-01), Ryding
patent: 4539217 (1985-09-01), Farley
patent: 4587433 (1986-05-01), Farley
patent: 5641969 (1997-06-01), Cooke et al.
patent: 5760409 (1998-06-01), Chen et al.
patent: 5898179 (1999-04-01), Smick et al.
patent: 6297510 (2001-10-01), Farley
patent: 6555825 (2003-04-01), Lowe et al.
patent: 6608316 (2003-08-01), Harrison
patent: 6646276 (2003-11-01), Mitchell et al.
patent: 2004/0058513 (2004-03-01), Murrell et al.
patent: 03088303 (2003-10-01), None
patent: 2004001789 (2003-12-01), None
Aberle David Eugene
Gallo Biagio
Kindersley Peter Torin
Simmons Jonathon Yancey
Wagner Dennis W.
Applied Materials Inc.
Boult Wade & Tennant
Wells Nikita
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