Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-01-11
2011-01-11
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S163000, C365S171000, C365S173000
Reexamination Certificate
active
07869253
ABSTRACT:
A method of determining the memory state of a resistive memory cell including a first electrode, a second electrode and an active material being arranged between the first electrode and the second electrode, comprises generating a read capacity by applying a voltage between the first electrode and the second electrode, discharging the read capacity over the active material of the memory cell, and determining the memory state of the memory cell in dependence on a change of the voltage during the discharge of the read capacity.
REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6813176 (2004-11-01), Gilton et al.
patent: 6873540 (2005-03-01), Krieger et al.
patent: 6950331 (2005-09-01), Yang et al.
patent: 7215568 (2007-05-01), Liaw et al.
patent: 7233515 (2007-06-01), Rohr
patent: 7254052 (2007-08-01), Liaw
patent: 7257013 (2007-08-01), Roehr
patent: 7388775 (2008-06-01), Bedeschi et al.
patent: 2003/0156463 (2003-08-01), Casper et al.
patent: 2005/0146958 (2005-07-01), Moore et al.
patent: 2005/0250281 (2005-11-01), Ufert et al.
patent: 2006/0062062 (2006-03-01), Baker
patent: 2006/0067147 (2006-03-01), Roehr
patent: 2000512058 (2000-09-01), None
patent: 2000293993 (2000-10-01), None
patent: 2005041204 (2005-05-01), None
The corresponding Japanese Office Action mailed May 11, 2010.
Abstract for JP 2000-293993 A.
Angerbauer Michael
Hoenigschmid Heinz
Liaw Corvin
Phan Trong
Qimonda AG
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