Method of detecting the endpoint of the etch of epitaxially grow

Details Method of detecting the endpoint of the etch of epitaxially grow Method of detecting the endpoint of the etch of epitaxially grow

1986-09-18

1988-01-05

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156627, 156643, 156646, H01L 21306

Patent

active

047174463

ABSTRACT:
A method of detecting the endpoint of expitaxially grown silicon using a monitor wafer is described. A monitor wafer having a substrate, an oxide layer, and a polysilicon layer is process in an epi chamber along with working wafers. The monitor wafer is used to determine the endpoint of the working wafers epi layer when the epi layer is etched.

REFERENCES:
patent: 4367044 (1983-01-01), Booth, Jr. et al.
patent: 4435898 (1984-03-01), Gaur et al.

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