Method of detecting misalignment of ion implantation area

Details Method of detecting misalignment of ion implantation area Method of detecting misalignment of ion implantation area

2006-10-17

2006-10-17

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C257S796000

Reexamination Certificate

active

07122388

ABSTRACT:
A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.

REFERENCES:
patent: 5082792 (1992-01-01), Pasch et al.
patent: 5256577 (1993-10-01), Pluntke et al.
patent: 5434089 (1995-07-01), Barthez
patent: 5956566 (1999-09-01), Lin et al.
patent: 6072192 (2000-06-01), Fulford et al.
patent: 6232619 (2001-05-01), Chen et al.
patent: 6620526 (2003-09-01), Tseng
patent: 6636313 (2003-10-01), Chen et al.
patent: 6657203 (2003-12-01), Koike
patent: 6713883 (2004-03-01), Hong et al.
patent: 6828647 (2004-12-01), Schafbauer et al.
patent: 2002/0190252 (2002-12-01), Adams et al.

Affiliated with

Also associated with

Rating

Method of detecting misalignment of ion implantation area does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of detecting misalignment of ion implantation area, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of detecting misalignment of ion implantation area will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3685058