Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-05-06
2008-05-06
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S797000, C257SE23001
Reexamination Certificate
active
07368749
ABSTRACT:
A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.
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Coleman W. David
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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