Semiconductor device manufacturing: process – With measuring or testing
Patent
1998-06-17
1999-10-26
Niebling, John F.
Semiconductor device manufacturing: process
With measuring or testing
134 13, 134 34, H01L 2166, G01R 3126
Patent
active
059727268
ABSTRACT:
An oxide film is formed of a silicon substrate, and then the oxide film is cleaned together with the silicon substrate. Afterwards, a medical fluid is dropped on the oxide film which has been cleaned, and then the oxide film is dissolved by the medical fluid to collect contaminants included in the oxide film.
REFERENCES:
patent: 4591890 (1986-05-01), Lund et al.
patent: 4634497 (1987-01-01), Shimazaki
patent: 4990459 (1991-02-01), Maeda et al.
Nishimura Takanori
Saitoh Yukio
Toshiyoshi Shigenori
Zushi Tokitsugu
Komatsu Electronic Metals Co. Ltd.
Murphy John
Niebling John F.
LandOfFree
Method of detecting concentration of contamination on a semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of detecting concentration of contamination on a semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of detecting concentration of contamination on a semicond will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-763292