Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2005-05-24
2005-05-24
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S018000, C438S692000
Reexamination Certificate
active
06897079
ABSTRACT:
Laser sources output laser lights L1and L2having different wavelengths so as to increase an accuracy of an endpoint detection of polishing processing by enabling an accurate detection of a film thickness of a layer insulating film on a surface of a wafer to be polished by the CMP processing, the lights are emitted from a detection window via a beam splitter to the layer insulating film formed on the surface of the wafer to be polished by a pad, different optical detectors detect interference lights corresponding to the laser lights L1and L2reflected and generated from a surface of the layer insulating film and a pattern under the surface via the detection window, the beam splitter, and a dichroic mirror, the detection results are supplied to a film thickness evaluation unit7, a film thickness of the layer insulation film is detected on the basis of a relationship between intensities of the reflected interference lights to the laser lights L1and L2or the intensity ratio, and an endpoint of polishing processing is determined when the film thickness is equal to a predetermined value.
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Japanese Patent Unexamined Publication No. 9-7985 (U.S. Appl. No. 5,964,643).
Hirose Takenori
Kojima Hiroyuki
Nomoto Mineo
Sato Hidemi
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Norton Nadine G.
Umez-Eronini Lynette T.
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