Method of deriving etching correction values for patterns of...

Details Method of deriving etching correction values for patterns of... Method of deriving etching correction values for patterns of...

2011-01-25

2011-01-25

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S041000, C216S060000, C216S084000, C430S005000

Reexamination Certificate

active

07875198

ABSTRACT:
A method of deriving etching correction values for the patterns of a photomask and a method of fabricating a photomask are described. The former method includes the following steps. The layout data of the photomask are provided, and local etching correction values of respective patterns are determined from the pattern configurations at respective areas of the photomask. A global etching correction value is determined from a wafer coverage ratio calculated mainly from the layout data. The local etching correction values of the respective patterns are added with the global etching correction value to obtain total etching correction values of the respective patterns. In the method of fabricating a photomask, the layout data are subjected to an etching correction based on the total etching correction values of the respective patterns and then to an optical proximity correction, and the photomask patterns are formed based on the resulting layout data.

REFERENCES:
patent: 6395438 (2002-05-01), Bruce et al.
patent: 6486492 (2002-11-01), Su
patent: 6684382 (2004-01-01), Liu
patent: 2004/0038139 (2004-02-01), Mui et al.
patent: 2007/0134921 (2007-06-01), Tian et al.

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