Method of deposition on wafer

Details Method of deposition on wafer Method of deposition on wafer

1998-05-07

2000-05-09

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438758, 438778, 438782, 438424, 118326, 4272555, H01L 21469

Patent

active

060604050

ABSTRACT:
A method of deposition with 4-PASS which is performed by a WJ-1000 or WJ-999 machine. Before each deposition is performed, it is necessary to turn the wafer an angle of 90.degree. in the same direction. When deposition is this manner is performed four times on the same wafer, the uniformity in the four corners of the layer deposited on the 8-inch wafer can be improved. Over-polishing or recesses can be reduced and the kink effect can be prevented. 4-PASS deposition performed on the WJ-1000 or WJ-999 machine can make the uniformity within the wafer better and the yield of production can be increased.

REFERENCES:
IBM Technical Disclosure Bulletin. "Deposition Induced Self-Alignment Process", vol. 32, Issue 12, pp. 168-170, May 1, 1990.

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