Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub

Details Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub

1979-10-11

1981-09-15

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

118 501, 204164, C23C 1100

Patent

active

042897971

ABSTRACT:
A method of depositing a uniform dielectric film on a silicon substrate comprising flowing a plasma comprising an RF-excited mixture of an inert gas such as argon and silane over the substrate to form a film of porous a-Si.sub.x H.sub.y over the surface of the substrate. The flow of plasma is then discontinued and a flow of a nitrogen or oxygen plasma is substituted therefor. The temperature of the substrate is increased to at least 360.degree. C. to diffuse-out hydrogen from the Si.sub.x H.sub.y film on the substrate, each departing hydrogen atom leaving a dangling Si bond behind which combines with the activated oxygen or nitrogen thereby to form the desired dielectric film of formula Si.sub.x N.sub.y or Si.sub.x O.sub.y.

REFERENCES:
patent: 3287243 (1966-11-01), Ligenza
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3600218 (1971-08-01), Pennebaker
patent: 3757733 (1973-09-01), Reinberg
patent: 3983264 (1976-09-01), Schroen et al.
patent: 4028142 (1977-06-01), Bitzer et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4066037 (1978-01-01), Jacob
patent: 4089992 (1978-05-01), Doo et al.
Rosler et al., "Solid State Technology", Jun. 1976, pp. 45-50.
Taft, "J. Electrochem. Soc.: Solid State Science", vol. 118, No. 8, Aug. 1971, pp. 1341-1346.
Brodsky, "IBM TDB", vol. 19, No. 11, Apr. 1977, pp. 4447-4450.

Affiliated with

Also associated with

Rating

Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing uniform films of Si.sub.x N.sub.y or Si.sub will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-391195