Method of depositing thin passivating film on microminiature sem

Details Method of depositing thin passivating film on microminiature sem Method of depositing thin passivating film on microminiature sem

1995-12-04

1997-04-15

Kunemund, Robert M.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438951, 438570, 438958, H01L 21338, H01L 2150, H01L 29812

Patent

active

056209096

ABSTRACT:
A thin conformal passivating dielectric film is deposited by ECR-CVD on an IC chip comprising semiconductor devices each of which includes a sub-micron-width irregularly shaped gate electrode. A protective layer of patterned resist is formed overlying each passivated device. Additional dielectric material is then deposited by ECP-CVD, at a temperature below the glass transition temperature of the resist, on the surface of the chip. Subsequently, in a lift-off step, the patterned resist together with the additional dielectric material overlying the resist is removed from the chip.

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