Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-02-01
2005-02-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Reexamination Certificate
active
06849560
ABSTRACT:
In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cm2and having a conductive film formed thereon with a substrate holder, disposing the substrate to face an electrode, and depositing a silicon thin film under a power density of 100 mW/cm2or more, the substrate holder is electrically insulated from the conductive film formed on the surface of the substrate by forming a separation groove in the conductive film.
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Kuribe Eiji
Suezaki Takashi
Fourson George
Hogan & Hartson LLP
Kaneka Corporation
Kebede Brook
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