Method of depositing patterned films of materials using a...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

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C257SE21023, C433S149000

Reexamination Certificate

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10630301

ABSTRACT:
The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(PriO)2(EAA)2.

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