Method of depositing oxide passivation layers on high temperatur

Details Method of depositing oxide passivation layers on high temperatur Method of depositing oxide passivation layers on high temperatur

1991-11-21

1993-03-23

Beck, Shrive

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505730, 427 62, 427 38, 4274192, 4274193, 4271263, 427585, 428702, 428930, B05D 512

Patent

active

051963795

ABSTRACT:
The present invention provides a method of depositing a passivation layer on the surface of a superconducting ceramic oxide wherein the passivation layer is a layer of an oxide of Al, Bi, Si or Al-W.

REFERENCES:
patent: 4361114 (1982-11-01), Gurev
patent: 4728621 (1988-03-01), Graf et al.
patent: 4916116 (1990-04-01), Yamazaki
Hazen et al., "100-K superconducting Phases in the Tl-Ca-Ba-Cu-O system", Phys. Rev. lett. 60(16) Apr. 1988 pp. 1657-1660.
Maeda et al., "A new high-Tc oxide superconductor without a rare earth element," Jpn. J. Appl. Phys. 27(2) Feb. 1988 L209-210.
Oyo Buturi, vol. 57, No. 2, Feb. 10, 1988, pp. 221-226; T. Hirao et al. Title: "Surface properties in high Tc Ba-y-Cu-O and passivation by thin insulator over-layer".
J. G. Bednorz et al., Z. Phys. B, 64, 189 (1986).
B. A. Biegel et al., SPIE: High-Tc Superconductivity: Thin Films and Devices, 948, 3 (1988).
B. A. Biegel et al., Mat. Res. Soc. Symp. Proc., 99, 873 (1988).
R. J. Cava et al., Nature, 332, 814 (1988).
S. A. Chambers et al., Phys. Rev. B, 35, 634 (1987).
C. W. Chu et al., Phys. Rev. Lett., 58, 405 (1987).
P. K. Gallagher et al., Mat. Res. Bull., 22, 995 (1987).
Y. Gao et al., in Thin Film Processing and Characterization of High-Temperature Superconductors; Amer. Inst. of Phys. Conf. Proc. No. 165; J. M. Harper et al., Eds.; New York, N.Y. 1987; p. 358.
P. M. Grant et al., Phys. Rev. Lett., 58, 2482 (1987).
P. Haldar et al., Science, 241, 1198 (1988).
Ychikawa et al., J. Appl. Phys., 27, L381 (1988).
S. Jin et al., Appl. Phys. Lett., 51, 203 (1987).
D. C. Johnston et al., Phys. Rev. B, 36, 4007 (1987).
O. Kohno et al., Jpn. J. Appl. Phys., 26, 1653 (1987).
O. K. Kwon et al., IEEE Electron Dev. Lett., 8, 582 (1987).
J. M. Longo et al., J. Solid State Chem., 6, 526 (1973).
H. M. Meyer et al., Appl. Phys. Lett., 51, 1118 (1987).
H. M. Meyer et al., Appl. Phys. Lett., 53, 1004 (Sep. 12, 1988).
J. B. Parise and A. W. Sleight et al., J. Solid State Chem., 76, 432 (1988).
Z. A. Sheng et al., Nature, 322, 55 (1988).
T. Siegrist et al., Phys. Rev. B, 36, 8365 (1987).
A. W. Sleight et al., Solid State Commun., 17, 27 (1975).
M. A. Subramanian and A. W. Sleight et al., Nature, 332, 420 (1988).
M. A. Subramanian et al., Science, 329, 1015 (1988).
J. H. Weaver et al., Phys. Rev. B., 38, 4688 (1988).
M. K. Wu et al., Phys. Rev. Lett., 58, 908 (1987).

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