Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-29
2010-02-09
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C438S761000, C257S635000, C257S761000, C257S766000, C257SE21179
Reexamination Certificate
active
07659215
ABSTRACT:
Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.
REFERENCES:
patent: 7220669 (2007-05-01), Hujanen et al.
patent: 2007/0018219 (2007-01-01), Lim et al.
patent: 10-2005-0033737 (2005-04-01), None
Mikko Utriainen, et al.; Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac) (M = Ni Cu, Pt) precursors; Applied Surface Science, 157:151-158, 2000.
Sangmoo Choi et al.; Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications; Applied Physics Letter, 86:123110, 2005.
Nobuyoshi Takahashi et al.; Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates; Applied Physics Letter, 76:209, 2000.
Mikko Utriainen et al.; Studies of NiO thin film formation by atomic layer epitaxy. Materials Science and Engineering, B54:98, 1998.
M. Kanoun et al.; Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications; Applied Physics Letter; 84:5079, 2004.
Shunji Nakata et al.; Nonvolatile memory using Al2O3 film with an embedded Al-rich layer; Applied Physics Letter; 87, 223110, 2005.
Shiye Wang et al.; Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2 /SiO2 stack as the tunnel dielectric. Applied Physics Letter; 86:113105, 2005.
M. Leskela and M. Ritala, “ALD precursor chemistry: Evolution and future challenges”, Journal de Physique IV France 9 (1999), pp. 837-852.
An Ki-Seok
Cho Won-Tae
Chung Taek-Mo
Kim Chang-Gyoun
Lee Sun-Sook
H.C. Park & Associates PLC
Korea Research Institute of Chemical Technology
Thai Luan C
LandOfFree
Method of depositing nanolaminate film for non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of depositing nanolaminate film for non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing nanolaminate film for non-volatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4205363