Method of depositing materials on a wafer to eliminate the effec

Details Method of depositing materials on a wafer to eliminate the effec Method of depositing materials on a wafer to eliminate the effec

1996-10-10

2000-07-11

Pianalto, Bernard

Coating processes

Electrical product produced

Metallic compound coating

427299, 427343, 427399, 4274197, B05D 512

Patent

active

06086947&

ABSTRACT:
A conductive adhesion layer (e.g. titanium 150 .ANG. thick) is formed on a substrate. A first conductive barrier layer (e.g. high-density gold-colored titanium-nitride 300 .ANG. thick) having properties of microcracking in a first direction to relieve inherent stress is deposited on the conductive adhesion layer. A second conductive barrier layer (e.g. low-density brown-colored titanium-nitride 400 .ANG. thick) having properties of low inherent stress is deposited on the first barrier layer. The second barrier layer may be exposed to air, thereby further inhibiting the leakage to the substrate of material from a conductive layer (e.g. aluminum silicon copper or aluminum copper) when a third barrier layer (e.g. high-density gold-colored titanium nitride 300 .ANG. thick) and such conductive layer are thereafter sequentially deposited on the second barrier layer. Such method may be used to provide a substantially uniform deposition on the walls of a groove for receiving a via. An insulating coating (e.g. silicon dioxide) may be deposited on the substrate and this coating may be etched to define the groove. The conductive layer and the first and second barrier layers may then be formed on the groove walls and the second layer may be exposed to air. The second barrier layer may then be etched as by argon to redistribute the second barrier layer into a substantially uniform thickness on the groove walls. The third barrier layer and the conductive layer may then be sequentially deposited on the second barrier layer in the groove.

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