Method of depositing high-quality SiGe on SiGe substrates

Details Method of depositing high-quality SiGe on SiGe substrates Method of depositing high-quality SiGe on SiGe substrates

2006-03-07

2006-03-07

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S478000

Reexamination Certificate

active

07008864

ABSTRACT:
This invention provides a method of depositing high-quality Si or SiGe epitaxial layers on SiGe substrates. By first depositing a thin Si seed layer on the SiGe substrate, the quality of the seed layer and of the subsequently deposited layers is greatly improved over what is obtained from depositing SiGe directly onto the SiGe substrate. Indeed, whereas the RMS surface roughness of the deposition of SiGe directly on SiGe, as measured by atomic-force microscopy (AFM), was 3–4 nm, it was more than an order of magnitude better when a thin Si seed layer was employed. This work was performed on an ultra-high-vacuum chemical vapor deposition (UHV/CVD) system; however, the same method would apply to other deposition systems such as atmospheric-pressure, low-pressure and rapid-thermal CVD.

REFERENCES:
patent: 6169007 (2001-01-01), Pinter
patent: 6462397 (2002-10-01), Ryum et al.
patent: 6559021 (2003-05-01), Houghton et al.
patent: 6559022 (2003-05-01), U'Ren
patent: 2002/0061627 (2002-05-01), Kovacic

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