Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-09-28
1995-10-24
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C23C 1434
Patent
active
054607043
ABSTRACT:
Ferrite films are formed by reactively sputtering elemental iron in an oxygen-containing plasma to deposit a layer of iron oxide (14) on a ceramic substrate (12). A dopant layer (16) of a transition metal-oxide is reactively sputtered onto the iron oxide layer from a target of a transition metal, such as nickel or zinc, using an oxygen-containing plasma. The substrate, the layer of iron oxide and the dopant layer are all heated under conditions sufficient to diffuse the dopant layer into the layer of iron oxide, thereby forming a doped ferrite thin film (20). The resulting doped ferrite film can be FeFe.sub.2 O.sub.4, NiFe.sub.2 O.sub.4, (NiZn)Fe.sub.2 O.sub.4, or ZnFe.sub.2 O.sub.4.
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patent: 4865658 (1989-09-01), Kudo
patent: 5294312 (1994-03-01), Chin et al.
"Ferrite Thin Films for Microwave Applications," I Zaquine et al, Journal Applied Physics 64 (10), 15 Nov. 1988, pp. 5822-5824, American Institute of Physics.
"Microwave Characterization of Microstrip Lines and Spiral Inductors in MCM-D Technology," Arnold, R. G., Pedder, D. J., IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 15, No. 6, Dec. 1992, pp. 1038-1045.
Dorinski Dale W.
Motorola Inc.
Weisstuch Aaron
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