Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing
Reexamination Certificate
2006-10-03
2006-10-03
Zarneke, David A. (Department: 2891)
Data processing: generic control systems or specific application
Specific application, apparatus or process
Product assembly or manufacturing
C427S577000, C427S249150, C427S255290, C438S784000
Reexamination Certificate
active
07117064
ABSTRACT:
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
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European Search Report from EP 01 11 6054. Dated Oct. 30, 2001.
Campana-Schmitt Francimar
Lee Jia
Nemani Srinivas D
Sugiarto Dian
Xia Li-Qun
Applied Materials Inc.
Patterson and Sheridan
Zarneke David A.
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