Method of depositing conductors in high aspect ratio apertures u

Details Method of depositing conductors in high aspect ratio apertures u Method of depositing conductors in high aspect ratio apertures u

1993-12-22

1996-06-25

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419217, 20429811, C23C 1434

Patent

active

055296700

ABSTRACT:
A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2.times. what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450.degree. C.) during the deposition process.

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Abstract of presentation by Stephen M. Rossnagel on Oct. 27, 1989 at the American Vacuum Society Conference.

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