Method of depositing an insulating film and a focusing ion beam

Details Method of depositing an insulating film and a focusing ion beam Method of depositing an insulating film and a focusing ion beam

1990-03-28

1992-01-21

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

427 38, H01J 3730

Patent

active

050830333

ABSTRACT:
Disclosed is a focusing ion beam apparatus, comprising an ion source, focusing and deflecting means for focusing and deflecting an ion beam obtained by the ion source, and a plurality of gas introducing means for a plurality of gases to be supplied onto the surface of a sample to deposit an insulating film. According to the apparatus, a silicon compound gas and a gas mainly consisting of an element other than silicon as a plurality of the gases are supplied onto the surface of the sample, then the ion beam obtained from the ion source is irradiated onto the gases. Thereby, the gases are decomposed so that an insulating film consisting of a silicon oxide or a silicon nitride is deposited on a desired oxide or a silicon nitride is deposited on a desired position of the surface of the sample.

REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4664937 (1987-05-01), Oushinsky et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
Ward et al., "Microcircuit Modification Using Focused Ion Beams," Proc. SPIE Int. Soc. Opt. Eng. 923, 1988, 92.
Hiura et al., "Localized Insulating Technique Using a SiO2 Film Deposited by Laser CVD," Proc. Autumn Meeting of the Japan Society of Applied Physics, Kanazawa, Oct. 1988, p. 534.

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