Method of depositing amorphous silicon based films having contro

Details Method of depositing amorphous silicon based films having contro Method of depositing amorphous silicon based films having contro

1995-07-11

1999-05-11

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427255, 4272551, 4272552, 148DIG1, B05D3/06

Patent

active

059026502

ABSTRACT:
A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

REFERENCES:
patent: 5576060 (1996-11-01), Hirai et al.

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