Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-14
1999-01-05
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438683, 438685, H01L 2144
Patent
active
058562362
ABSTRACT:
A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
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Violette et al. "Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane", J. Electrochem. Soc., vol. 143, No. 2, Feb. 1996, pp. 649-656.
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Sugai et al, "Aluminum Chemical Vapor Deposition with New Gas Phase Pretreatment Using Tetrakisdimethylamino-titanium for Ultralarge-scale Integrated-Circuit Metallization", J. Vac. Sci. Technol. B 13(5), Sep./Oct. 1995, pp. 2115-2118.
Iyer Ravi
Lai Gilbert
Sandhu Gurtej S.
Vaartstra Brian A.
Berry Renee R.
Bowers Charles
Micro)n Technology, Inc.
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