Method of depositing a silicon dioxide-comprising layer in...

Details Method of depositing a silicon dioxide-comprising layer in... Method of depositing a silicon dioxide-comprising layer in...

2006-03-17

2008-12-30

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21278

Reexamination Certificate

active

07470635

ABSTRACT:
This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semiconductor substrate having an exposed outer first surface comprising silicon-nitrogen bonds and an exposed outer second surface comprising at least one of silicon and silicon dioxide is provided. A layer comprising a metal is deposited over at least the outer second surface. A silanol is flowed to the metal of the outer second surface and to the outer first surface effective to selectively deposit a silicon dioxide comprising layer over the outer second surface as compared to the outer first surface. Other aspects and implementations are contemplated.

REFERENCES:
patent: 3809574 (1974-05-01), Duffy et al.
patent: 3990927 (1976-11-01), Montier
patent: 4474975 (1984-10-01), Clemons et al.
patent: 4836885 (1989-06-01), Breiten et al.
patent: 5105253 (1992-04-01), Pollock
patent: 5156881 (1992-10-01), Okano et al.
patent: 5182221 (1993-01-01), Sato
patent: 5387539 (1995-02-01), Yang et al.
patent: 5410176 (1995-04-01), Liou et al.
patent: 5470798 (1995-11-01), Ouellet
patent: 5516721 (1996-05-01), Galli et al.
patent: 5518959 (1996-05-01), Jang et al.
patent: 5565376 (1996-10-01), Lur et al.
patent: 5604149 (1997-02-01), Paoli et al.
patent: 5616513 (1997-04-01), Shepard
patent: 5702977 (1997-12-01), Jang et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5741740 (1998-04-01), Jang et al.
patent: 5770469 (1998-06-01), Uram et al.
patent: 5776557 (1998-07-01), Okano et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5786263 (1998-07-01), Perera
patent: 5801083 (1998-09-01), Yu et al.
patent: 5863827 (1999-01-01), Joyner
patent: 5883006 (1999-03-01), Iba
patent: 5888880 (1999-03-01), Gardner et al.
patent: 5895253 (1999-04-01), Akram
patent: 5895255 (1999-04-01), Tsuchiaki
patent: 5904540 (1999-05-01), Sheng et al.
patent: 5923073 (1999-07-01), Aoki et al.
patent: 5930645 (1999-07-01), Lyons et al.
patent: 5930646 (1999-07-01), Gerung et al.
patent: 5943585 (1999-08-01), May et al.
patent: 5950094 (1999-09-01), Lin et al.
patent: 5960299 (1999-09-01), Yew et al.
patent: 5972773 (1999-10-01), Liu et al.
patent: 5976949 (1999-11-01), Chen
patent: 5981354 (1999-11-01), Spikes et al.
patent: 5989978 (1999-11-01), Peidous
patent: 5998280 (1999-12-01), Bergemont et al.
patent: 6013583 (2000-01-01), Ajmera et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6033961 (2000-03-01), Xu et al.
patent: 6051477 (2000-04-01), Nam
patent: 6069055 (2000-05-01), Ukeda et al.
patent: 6090675 (2000-07-01), Lee et al.
patent: 6127737 (2000-10-01), Kuroi et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6171962 (2001-01-01), Karlsson et al.
patent: 6187651 (2001-02-01), Oh
patent: 6190979 (2001-02-01), Radens et al.
patent: 6191002 (2001-02-01), Koyanagi
patent: 6245641 (2001-06-01), Shiozawa et al.
patent: 6265282 (2001-07-01), Lane et al.
patent: 6300219 (2001-10-01), Doan et al.
patent: 6326282 (2001-12-01), Park et al.
patent: 6329266 (2001-12-01), Hwang et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6355966 (2002-03-01), Trivedi
patent: 6448150 (2002-09-01), Tsai et al.
patent: 6455394 (2002-09-01), Iyer et al.
patent: 6524912 (2003-02-01), Yang et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6583028 (2003-06-01), Doan et al.
patent: 6583060 (2003-06-01), Trivedi
patent: 6607959 (2003-08-01), Lee et al.
patent: 6617251 (2003-09-01), Kamath et al.
patent: 6674132 (2004-01-01), Willer
patent: 6719012 (2004-04-01), Doan et al.
patent: 6821865 (2004-11-01), Wise et al.
patent: 6930058 (2005-08-01), Hill et al.
patent: 6933225 (2005-08-01), Werkhoven et al.
patent: 7033909 (2006-04-01), Kim et al.
patent: 7053010 (2006-05-01), Lie et al.
patent: 7141278 (2006-11-01), Koh et al.
patent: 2001/0006255 (2001-07-01), Kwon et al.
patent: 2001/0006839 (2001-07-01), Yeo
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0046753 (2001-11-01), Gonzales et al.
patent: 2002/0000195 (2002-01-01), Bang et al.
patent: 2002/0004284 (2002-01-01), Chen
patent: 2002/0018849 (2002-02-01), George et al.
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0129826 (2003-07-01), Werkhoven et al.
patent: 2004/0016987 (2004-01-01), Sawada et al.
patent: 2004/0032006 (2004-02-01), Yun et al.
patent: 2004/0082181 (2004-04-01), Doan et al.
patent: 2004/0209484 (2004-10-01), Hill et al.
patent: 2004/0266153 (2004-12-01), Hu
patent: 2005/0009293 (2005-01-01), Kim et al.
patent: 2005/0009368 (2005-01-01), Vaartstra
patent: 2005/0054213 (2005-03-01), Derderian et al.
patent: 2005/0079730 (2005-04-01), Beintner et al.
patent: 2005/0112282 (2005-05-01), Gordon et al.
patent: 2005/0124171 (2005-06-01), Vaarstra
patent: 2005/0142799 (2005-06-01), Seo
patent: 0817251 (1998-01-01), None
patent: 959493 (1999-11-01), None
patent: 02277253 (1990-11-01), None
patent: 05-315441 (1993-11-01), None
patent: 06-334031 (1994-12-01), None
patent: 146224 (1996-01-01), None
patent: 02/27063 (2002-04-01), None
patent: PCT/US2004/021156 (2004-06-01), None
PCT/US2004/021156, Dec. 12, 2005, IPER.
Beekmann et al.,Sub-micron Gap Fill andIn-SituPlanarisation using FlowfillJ Technology, Electrotech 1-7 ULSI Conference, Portland, OR (Oct. 1995).
Chen et al.,Excimer Laser-Induced Ti Silicidation to Eliminate the Fine-Line Effect for Integrated Circuity Device Fabrication, 149 Journal of Electrochemical Society, No. 11, pp. G609-G612 (2002).
Curtis et al.,APCVD TEOS: O3 Advanced Trench Isolation Applications, Semiconductor Fabtech, 9thEd., pp. 241-247 (pre-Jul. 2003).
Disclosed Anonymous 32246,Substrate Contact with Closed Bottom Trenches, Research Disclosure, 1 page (Feb. 1991).
Gasser et al.,Quasi-monolayer deposition of silicon dioxide, Elsevier Science S.A., pp. 213-218 (1994).
George, S.M. et al.,Atomic layer controlled deposition of SiO2and Al2O3using ABAB . . . reaction sequence chemistry, 82/83 Applied Surface Science, pp. 460-467 (Jul. 10, 1994).
PCT/US2004/021156, Jun. 2004, Written Opinion.
Hausmann et al.,Catalytic vapor deposition of highly conformal silica nanolaminates, Department of Chemistry and Chemical Biology, Harvard University, pp. 1-13 (May 14, 2002).
Hausmann et al.,Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates, 298 Science, pp. 402-406 (Oct. 11, 2002).
Horie et al.,Kinetics and Mechanism of the Reactions of O(3P)with SiH4, CH3SiH3,(CH3)2SiH2, and(CH3)3SiH, 95 J. Phys. Chem., pp. 4393-4400 (1991).
Joshi et al.,Plasma Deposited Organosilicon Hydride Network Polymers as Versatile Resists for Entirely Dry Mid-Deep UV Photolithography, 1925 SPIE, pp. 709-720 (Jan. 1993).
Kiermasz et al.,Planarisation for Sub-Micron Devices Utilising a New Chemistry, Electrotech 1-2, DUMIC Conference, California (Feb. 1995).
Klaus et al.,Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions, 6 Surface Review and Letters, Nos. 3 and 4, pp. 435-448 (1999).
Kojima et al.,Planarization Process Using a Multi-Coating of Spin-on-Glass,V-MIC Conference, pp. 390-396 (Jun. 13-14, 1988).
Matsuura et al.,A Highly Reliable Self-planarizing Low-k Intermetal Dielectric for Sub-quarter Micron Interconnects, 97 IEEE, pp. 785-788 (Jul. 1997).
Matsuura et al.,Novel Self-planarizing CVD Oxide for Interlayer Dielectric Applications; 94 IEEE, pp. 117-120 (1994).
McClatchie et al.Low Dielectric Constant FlowfillJ Technology for IMD Applications, 7 pages (pre-Aug. 1999).
Miller et al.,Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy)Silanol, 397 Thin Solid Films, pp. 78-82 (2001).
Morishita et al.Atomic-layer chemical-vapor-deposition of silicon-nitride, 112 Applied Surface Science, pp. 198-204 (1997).
Nishiyama et al.,Agglomeration Resistant Self-Aligned Silicide Process Using N2Implantation into TiSl2, 36 Jpn. J. Appl. Phys., Part 1, No. 6A, pp. 3639-3643 (Jun. 1997).
Shareef et al.,Subatmospheric chemical vapor deposition ozone/TEOS process for

Affiliated with

Also associated with

Rating

Method of depositing a silicon dioxide-comprising layer in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing a silicon dioxide-comprising layer in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing a silicon dioxide-comprising layer in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4047314