Method of depositing a refractory metal on a semiconductor subst

Details Method of depositing a refractory metal on a semiconductor subst Method of depositing a refractory metal on a semiconductor subst

1981-03-26

1982-09-14

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29590, 156653, 156657, 156662, 357 54, 357 59, 427 91, 427253, 427307, H01L 21285, H01L 21308, H01L 21314, H01L 2132

Patent

active

043494080

ABSTRACT:
A method for depositing a refractory on a semiconductor substrate passivated with silicon dioxide and/or oxygen doped polycrystalline silicon is disclosed. The usual undercutting of the oxygen doped polycrystalline silicon or of the silicon substrate at the edge where it meets the oxide is prevented by depositing a layer of phosphorus doped polycrystalline silicon over the passivation material before the metal is deposited.

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patent: 4322453 (1982-03-01), Miller
Morosanu et al. "Thin Film . . . Reactor" Vacuum, vol. 31, No. 7, (1-19-81), pp. 309-313.

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