Method of depositing a higher permittivity dielectric film

Details Method of depositing a higher permittivity dielectric film Method of depositing a higher permittivity dielectric film

2005-06-01

2010-10-19

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S591000, C438S786000, C257SE21625, C257SE21639

Reexamination Certificate

active

07816283

ABSTRACT:
A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (AxNy) on the silicon layer, wherein the specific element (A) and nitrogen (N) in the nitride film (AxNy) have a predetermined fraction relationship between x and y; a second step of oxidizing the nitride film in a oxygen atmosphere to form the dielectric film (AON).

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English translation of Office Action issued on Apr. 1, 2008 in corresponding Japanese Patent Application No. 2004-160928.

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