Method of deforming a pattern and semiconductor device...

Details Method of deforming a pattern and semiconductor device... Method of deforming a pattern and semiconductor device...

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S170000, C257S254000, C257S391000

Reexamination Certificate

active

06949766

ABSTRACT:
A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selected region and separate from the selected region; selectively forming at least one pattern on the selected region; and causing a re-flow of the pattern, wherein a part of an outwardly re-flowed pattern is flowed into the re-flow stopper groove, and then an outward re-flow of the pattern is restricted by the re-flow stopper groove extending outside of the pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of the re-flow stopper groove.

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