Method of defining contact openings in insulating layers on semi

Details Method of defining contact openings in insulating layers on semi Method of defining contact openings in insulating layers on semi

1978-07-26

1979-11-13

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156662, 252 792, 357 54, 357 59, 1566591, 1566611, H01L 21285, H01L 21306, H01L 21314

Patent

active

041742524

ABSTRACT:
A p-n junction silicon semiconductor device passivated with a first layer of oxygen-doped polycrystalline silicon and a second layer of silicon nitride, is treated to provide contact openings through to the silicon substrate by first depositing an undoped polycrystalline silicon layer over the silicon nitride layer, coating with photoresist, exposing and developing the photoresist to provide an opening to the polycrystalline silicon layer, etching through said latter layer with a particular etchant solution that etches large diameter openings at a faster rate than small diameter openings, and etching through the passivating layers whereby the desired contact opening is etched through to the substrate but pinhole openings less than about 2 microns in diameter in the photoresist layer are not propagated through the passivating layers.

REFERENCES:
patent: 3592707 (1971-07-01), Jaccodine
patent: 3673018 (1972-06-01), Dingwall
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4001873 (1977-01-01), Kajiwara et al.
patent: 4014037 (1977-03-01), Matsushita et al.
patent: 4062707 (1977-12-01), Morchizucki et al.
patent: 4063275 (1977-12-01), Matsushita et al.
patent: 4134125 (1979-01-01), Adams et al.
Winter et al., "Pinhole Detection . . . Oxides", IBM Technical Disclosure Bulletin, vol. 13, No. 12 (5/71), p. 3632.
Schwartz et al., "Chemical . . . Silicon", Journal of Electrochemical Society, Dec. 1976, pp. 1903-1909.

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