Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-03
1998-09-01
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438660, 438685, 438688, H01L 21441
Patent
active
058010980
ABSTRACT:
A method of decreasing resistivity in an electrically conductive layer (23) includes providing a substrate (14), using a high density plasma sputtering technique to deposit the electrically conductive layer (23) over the substrate (14), and exposing the electrically conductive layer (23) to an anneal in an ambient comprised of a plasma (21).
REFERENCES:
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5084412 (1992-01-01), Nakasaki
patent: 5196360 (1993-03-01), Doan et al.
patent: 5232871 (1993-08-01), Ho
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5449631 (1995-09-01), Giewont et al.
patent: 5508066 (1996-04-01), Akahori
patent: 5567483 (1996-10-01), Foster et al.
patent: 5587339 (1996-12-01), Wyborn et al.
Rossnagel; "Directional Sputter Deposition for Semiconductor Applications"; Mat. Res. Soc. Symp. Proc., vol. 354; pp. 503-510 (1996).
Rossnagel, et al.; "Magnetron sputter deposition with high levels of metal ionization", Appl. Phys. Lett. 63 (24); pp. 3285-3287 (1993).
Fiordalice Robert
Garcia Sam
Ong T. P.
Abel Jeffrey S.
Everhart Caridad
Goddard Patricia S.
Motorola Inc.
LandOfFree
Method of decreasing resistivity in an electrically conductive l does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of decreasing resistivity in an electrically conductive l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of decreasing resistivity in an electrically conductive l will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-269916