Method of damage free doping for forming a dram memory cell

Details Method of damage free doping for forming a dram memory cell Method of damage free doping for forming a dram memory cell

1997-05-27

1998-05-05

Tsai, Jey

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438303, 148DIG144, H01L 2122

Patent

active

057473781

ABSTRACT:
A method of damage-free doping for forming a dynamic random access memory cell is disclosed herein. A phosphoric silicate glass is deposited as a diffusion source. The phosphorous ions of phosphoric silicate glass can be diffused into a substrate to form the source/drain regions by a high temperature during a thermal annealing process. Next, a thermal oxide layer is formed on the gate electrode and the surface of the substrate by the thermal oxidation process. The thermal oxide layer can prevent ions from diffusing into the substrate during the subsequent thermal treatment process. Therefore, the present invention can reduce the damage of a dynamic random access memory.

REFERENCES:
patent: 4486943 (1984-12-01), Ryden et al.
patent: 5482876 (1996-01-01), Hsieh et al.
patent: 5599734 (1997-02-01), Byun et al.

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