Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-06-20
1999-03-23
McPherson, John A.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430314, 430394, G03F 720
Patent
active
058857494
ABSTRACT:
A method for fabricating custom integrated circuits includes the steps of 1) patterning a photoresist layer on an insulative layer with a standard via precision mask to define all possible vias, and 2) using a targeting energy beam to select the desired via locations, which are then etched and interconnections made, for customization or repair of the integrated circuit. Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods.
REFERENCES:
patent: 4689657 (1987-08-01), Percival et al.
patent: 4691434 (1987-09-01), Percival et al.
patent: 4875971 (1989-10-01), Orbach et al.
patent: 4931380 (1990-06-01), Owens et al.
patent: 4960729 (1990-10-01), Orbach et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5314840 (1994-05-01), Schepis et al.
patent: 5404033 (1995-04-01), Wong et al.
patent: 5593813 (1997-01-01), Kim
patent: 5702868 (1997-12-01), Kellam et al.
Huggins Alan H.
MacPherson John
Chen Tom
Clear Logic, Inc.
McPherson John A.
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