Method of crystallizing amorphous silicon layer and...

Details Method of crystallizing amorphous silicon layer and... Method of crystallizing amorphous silicon layer and...

2006-04-04

2006-04-04

Kunemund, Robert (Department: 1722)

Coating apparatus

Gas or vapor deposition

Multizone chamber

C118S715000, C117S095000, C117S096000, C117S104000, C117S200000, C117S202000

Reexamination Certificate

active

07022191

ABSTRACT:
The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

REFERENCES:
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5851860 (1998-12-01), Makita et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6309951 (2001-10-01), Jang et al.

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