Method of crystalizing amorphous silicon for use in thin...

Details Method of crystalizing amorphous silicon for use in thin... Method of crystalizing amorphous silicon for use in thin...

2005-09-27

2005-09-27

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000, C438S795000

Reexamination Certificate

active

06949422

ABSTRACT:
Sequential lateral solidification (SLS) crystallization of amorphous silicon uses a mask having light transmitting portions. A method of crystallizing an amorphous silicon film using the mask includes forming an amorphous silicon layer over a substrate; forming a metal layer on the amorphous silicon layer; patterning the metal layer to expose a portion of the amorphous silicon layer in a TFT area where a thin film transistor is formed; disposing the mask over the portion of the amorphous silicon layer exposed by the metal layer; and irradiating the portion of the amorphous silicon layer exposed by the metal layer using a laser beam that passes through the light transmitting portions of the mask such that the portion of the amorphous silicon layer is crystallized and laterally growing grains are formed in grain regions.

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Copy of Office Action dated Jan. 24, 2005 for Korean Patent Application No. 10-2002-0088403.

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