Method of creating shielded structures to protect...

Details Method of creating shielded structures to protect... Method of creating shielded structures to protect...

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Formation of semi-insulative polycrystalline silicon

C438S106000, C438S211000, C438S422000

Reexamination Certificate

active

06949476

ABSTRACT:
An apparatus on a wafer, comprising: a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising: one or more base frames, a fourth metal layer of the wall comprising: one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising: one or more top frames each over the pass-thru; and a metal lid.

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Electricity, Physics Demonstrations—Electricity, downloaded from http://sprott.physics.wisc.edu/demobook/chapter4.html, 16 pages, Dec. 15, 1999.

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