Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-07-11
2006-07-11
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S530000, C438S938000
Reexamination Certificate
active
07074686
ABSTRACT:
A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate material is provided which first includes forming a SiGe or pure Ge layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to the diffusion of Ge. Optionally forming a Si cap layer over the SiGe or pure Ge layer, and thereafter heating the various layers at a temperature which permits interdiffusion of Ge throughout the first single crystal Si layer, the optional Si cap and the SiGe or pure Ge layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Additional SiGe regrowth and/or formation of a strained epi-Si layer may follow the above steps. SiGe-on-insulator substrate materials as well as structures including at least the SiGe-on-insulator substrate materials are also disclosed herein.
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Bedell Stephen W.
Chu Jack O.
Fogel Keith E.
Koester Steven J.
Sadana Devendra K.
Dang Phuc T.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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