Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2007-06-26
2007-06-26
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S347000, C257S616000, C438S311000, C438S479000
Reexamination Certificate
active
10939736
ABSTRACT:
A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same.
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Chu Jack O.
Cobb Michael A.
Saunders Philip A.
Shi Leathen
International Business Machines - Corporation
Jr. Carl Whitehead
Rodgers Colleen E.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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