Method of creating a tapered via using a receding mask and...

Details Method of creating a tapered via using a receding mask and... Method of creating a tapered via using a receding mask and...

2006-07-25

2006-07-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S774000

Reexamination Certificate

active

07081408

ABSTRACT:
Embodiments of a method of forming a tapered via using a receding mask are disclosed. In one embodiment, an etch mask formed on a substrate includes a first aperture in a first photoresist layer and a second, larger aperture in an overlying second photoresist layer. Peripheries of the first and second apertures may be tapered as a result of an out-of-focus exposure. An etching process may be performed to create a tapered via in the substrate, and during this etching process, the first, relatively thinner photoresist layer will recede outwardly toward the aperture in the second photoresist layer. Other embodiments are described and claimed.

REFERENCES:
patent: 5374503 (1994-12-01), Sachdev et al.
patent: 6577010 (2003-06-01), Batra et al.

Affiliated with

Also associated with

Rating

Method of creating a tapered via using a receding mask and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of creating a tapered via using a receding mask and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of creating a tapered via using a receding mask and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3550111