Method of coupling titanium to a semiconductor substrate and sem

Details Method of coupling titanium to a semiconductor substrate and sem Method of coupling titanium to a semiconductor substrate and sem

1996-02-20

1998-07-21

Picardat, Kevin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, H01L 2144

Patent

active

057834873

ABSTRACT:
A semiconductor device (10) includes a semiconductor substrate (11) underlying an oxide layer (12). A layer (13) comprised of titanium overlies the oxide layer (12). The oxide layer (12) improves the adhesion of the layer (13) comprised of titanium to the semiconductor substrate (11).

REFERENCES:
patent: 4417387 (1983-11-01), Heslop
patent: 4713260 (1987-12-01), Roberts et al.
patent: 4793854 (1988-12-01), Shimotori et al.
patent: 5236868 (1993-08-01), Nulman
patent: 5360765 (1994-11-01), Kondo et al.
patent: 5449640 (1995-09-01), Hunt et al.

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