Method of correcting mask pattern

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000

Reexamination Certificate

active

07392503

ABSTRACT:
A method of correcting a mask pattern is provided. First, an original writer drawing data of a circuit layout pattern is inputted. Then, according to the original writer drawing data, a correcting writer rule is selected by searching from a look-up table. According to the correcting writer rule, the original writer drawing data is corrected to obtain a corrected writer drawing data of the circuit layout pattern.

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patent: 2004/0015808 (2004-01-01), Pang et al.
patent: 2005/0196688 (2005-09-01), Kim et al.

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