Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1988-02-04
1990-05-15
Dees, Jose G.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430324, 430323, 2504923, 356237, 378 35, G03F 100
Patent
active
049257552
ABSTRACT:
A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film as a plating electrode, thereby forming a metal frame to correct the dropout defective portion.
REFERENCES:
patent: 4256778 (1981-03-01), Mizukami et al.
patent: 4328298 (1982-05-01), Nester
patent: 4503329 (1985-03-01), Yamaguchi et al.
patent: 4751169 (1988-06-01), Behringer et al.
Patent Abstracts of Japan, vol. 6, No. 185 (E-132) [1063], 21st Sep. 1982; and JP-A-57 100 727 (Toppan Insatsu K.K.) 23-06-1982.
Patent Abstracts of Japan, vol. 8, No. 13 (E-222) [1450], 20th Jan. 1984 and JP-A-58 178 521 (Hitachi Seisakusho K.K.) 19-10-1983.
Patent Abstracts of Japan, vol. 6 No. 264 (E-150) [1142], 23rd Dec. 1982; and JP-A-57 160 129 (Mitsubishi Denki K.K.) 02-10-1982.
"Characteristics of Tungsten Film by Focused Ion Beam CVD", Drafts for Joint Lecture and Meeting of 33rd meeting of Applied Physics Society p. 339.
"Applications of Focused Ion Beams to Microlithography" by Alfred Wagner, Solid State Technology/May 1983 pp. 97-103.
Aiuchi Susumu
Akiyama Nobuyuki
Haraichi Satoshi
Kimura Takeshi
Kuniyoshi Shinji
Dees Jos,e G.
Hitachi , Ltd.
LandOfFree
Method of correcting defect in circuit pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of correcting defect in circuit pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of correcting defect in circuit pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-621072