Method of correcting critical dimension in photomask and...

Details Method of correcting critical dimension in photomask and... Method of correcting critical dimension in photomask and...

2007-06-12

2010-06-29

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C216S012000

Reexamination Certificate

active

07745072

ABSTRACT:
Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.

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Korean Intellectual Property Office Notice to Submit Response dated Aug. 31, 2006 and English Translation.
Office Action dated Apr. 14, 2010, issued in corresponding Chinese Patent Application No. 200610129040.1.

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