Method of controlling polysilicon crystallization

Details Method of controlling polysilicon crystallization Method of controlling polysilicon crystallization

2004-02-05

2008-10-14

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C257SE21572

Reexamination Certificate

active

07435667

ABSTRACT:
A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

REFERENCES:
patent: 6867074 (2005-03-01), Tsao
patent: 7071083 (2006-07-01), Lin
patent: 2001/0010391 (2001-08-01), Nakajima et al.
patent: 2005/0062079 (2005-03-01), Wu et al.
patent: 2005/0079294 (2005-04-01), Lin et al.

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